中国科大微电子学院
  

孙海定

邮箱:haiding@ustc.edu.cn

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经历:
2004-2008 华中科技大学,学士,电子科学与技术
2009-2015 美国波士顿大学,博士,电子工程(导师:Dr. Theodore D. Moustakas)
2015-2016 墨西哥SolarEver太阳能波士顿分公司,首席科学家
2016-2018 沙特阿卜杜拉国王科技大学(KAUST),博士后兼Lab Manager

简介:


孙海定博士现任中国科大微电子学院特任研究员,博士生导师,IEEE Senior Member毕业于美国波士顿大学,博士期间师从氮化物半导体分子束外延(MBE)奠基人Theodore D. Moustakas教授,长期致力于MBE/MOCVD宽禁带III族氮化物(GaN等)和III族氧化物(Ga2O3等)半导体材料外延、紫外光电器件和电力电子器件设计与制备研究。主要研究半导体材料外延技术, 器件设计与工艺制造, 器件光、电性能表征与物理机制研究,涵盖光电子(LED, laser, photodetector等)和HEMT等电子功率器件。同时包括低维材料与器件(纳米线,量子点),二维/三维新型半导体异质结的材料生长和电子输运特性研究。并与工业界紧密合作(欧司朗OSRAM公司等),部分技术实现产业化。近五年来在半导体材料和光电、电子器件领域重要期刊,如Reports on Progress in Physics, Advanced Functional Materials, Nano Letters, Advanced Optical Materials, Nano Energy, ACS Photonics, Optica, IEEE Electron Device Lett., Appl. Phys. Lett., Opt. Express, Optics Letter等发表76篇论文(其中一作20篇,通讯作者29篇)。申请美国专利5项,国际专利8项,中国专利26项。在国际会议上做口头报告42次(8次特邀报告)。受邀撰写ELSEVIER出版社《Ultrawide Bandgap Semiconductors》书中题为AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodesControlling different phases of gallium oxide for solar-blind photodetector application”的两个章节,人民邮电出版社出版的《可见光通信新型发光器件原理与应用》书中题为非极性和半极性面氮化镓激光器1个章节,均已经出版。相关工作受到同行和业界广泛关注,被国际科技媒体报道100余次,包括半导体行业权威杂志《Compound Semiconductor》(10次)、《Semiconductor Today》(5次)、欧洲最大电子工程杂志eeNews Europe7次)、美国主流科技媒体Phys.org7次),科研成果多次以周刊/月刊亮点新闻专题报道。受邀长期担任多个国际会议的分会联席主席,Crystal, Journal of Electronic PackagingSCI期刊客座编辑,Advanced Materials80多家重要期刊审稿人。2014年在波士顿创立美国太阳能公司CloudSolar,被华尔街日报,波士顿环球时报,美国国家广播电台等报道。


招生对象:


本科大三大四(指导暑期研究/毕业设计,保研/考研学生),及硕士/博士/博士后背景:电子,物理,材料,光电,化学等对半导体材料和器件感兴趣的同学。

 

论文列举(详细及最新文章请点击上面个人主页):

1.      S. Fang, Haiding Sun* et al, Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet BandAdv. Funct. Mater. 2103007 (2021)

2.      H. Zhang, Haiding Sun* et al, Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics, Reports on Progress in Physics, 84(4), 044401 (2021)

3.      D. Wang, Haiding Sun* et al, Highly Uniform, Self-Assembled AlGaN Nanowires for  Self-Powered Solar-Blind Photodetector with Fast-Response Speed and High Responsivity, Advanced Optical Materials, 2000893, 2020.

4.      D. Wang, Ran Long, Yujie Xiong, Boon S. Ooi, Zetian Mi, Jr-Hau He, and Haiding Sun*, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021). 

5.      C. Huang, Haiding Sun*, Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System, Nano Energy, 77, 105149 (2020)

6.      H. Zhang, and Haiding Sun* et al, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W. Applied Physics Letters, 118(24), p.242105 (2021)

7.      Yu, H, Haiding Sun* et al, AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Optics Letters 46(13), 3271-3274 (2021)

8.      Y. Qin, Haiding Sun*, Shibing Long*, and Ming Liu, Metal−Semiconductor−Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism, ACS Photonics 7(3), 812−820, 2020 (Cover Article杂志封面文章)

9.      K. Song, Houqiang Fu, Rajendra Singh, Yuji Zhao, Haiding Sun* and Shibing Long, Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping. Journal of Physics D: Applied Physics.53, 345107, 2020

10.  Z. Ren, Haiding Sun* et al, “Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: A review”,Journal of Physics D: Applied Physics, 53, 073002, 2019

11.  Haiding. Sun*, W. Guo*, J. Ye, B. S. Ooi, I. S. Roqan*, Z. Zhang, J. Dai*, C. Chen, and S. Long “Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate”, Advanced Functional Materials,29 (48), 1905445, 2019 # 媒体报道:Featured in Compound Semiconductor,中国科技日报,中国科学报(2020年第7423期头版

12.  H. Yu, Haiding Sun* Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with Al-composition graded quantum barrier, Optics Express, 27(20), A1544-A1553, 2019

13.  X. Hou; Haiding Sun*; Shibing Long*; Gary S. Tompa ; Ming Liu “Ultrahigh-Performance Solar-Blind Photodetector Based on α-Phase-Dominated Ga2O3 Film with Record Low Dark Current of 81 fAIEEE Electron Device Letters, 40, 1483, 2019. (Highlight on IEEE EDL Journal Cover and Editors’ Picks Article,杂志封面重点介绍文章)

14.  Haiding Sun* et al, Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes,ACS Photonics, 5(3), 964 (2018).

#媒体报道:Featured in eeNews Europe, eeNews LED lighting, Phys.org, Nanowerk,EurekAlert(AAAS), 以及Compound Semiconductor

15.  Haiding Sun* et al, Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation, ACS Photonics,8, 3305, 2018

16.  Haiding Sun* et al, HCl Flow-Induced Phase Change of α-, β- and ε-Ga2O3 Films Grown by MOCVD,Crystal Growth & Design, 18, 4, 2370-23762018# 媒体报道:Featured in Compound Semiconductor, Science Newsline, Phys.org, Nanowerk

17.  B Zhou, Haiding Sun, J Song, Z Mi* Few-atomic-layers iron for hydrogen evolution from water by photoelectrocatalysis Iscience 23 (10), 101613 (2021)

18.  H. Hu, Haiding Sun, S. Zhou*, S. Liu, L. J. Guo Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array. Nano Energy, 69, 104427, 2020

19.  M. Garg, Haiding Sun, and R. Singh et al, Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules, Journal of Applied Physics 124, 195702 (2018);

 

 

国际合作:

1.    Prof. Boon S. Ooi, Kazuhiro Ohkawa from KAUST, Saudi Arabia

2.    Prof. Zetian Mi from University of Michigan, Ann Abor

3.    Prof. Rajendra Singh from Indian Institute of Technology, Delhi

 


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